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[diffusionx]

So this is the variable clock secret sauce

 

[longdi]

The noise comes from the tiny fan blades, fan bearings, exhaust holes, housing vibrations etc....

This liquid metal seems more an expensive fix to run the variable clock secret sauce.

 

[Gamerguy84]

OMG theyve invented liquid metal. They bypassed water cooling and straight to LM. Wow.

Its thermal compound huh? Lol..

 

[geordiemp]

.... and when was the patent filed?

Priority date (day.month.year)
04.02.2019 We've been seeing this posted for more then a year. I still don't see any evidence its related to PS5.

No we have not seen this posted for more than a year. Link ?

You wont have read it then unless you worked in the patent office or for Sony.

The priority date is the filing date of the very first patent application for a specific invention. Within 12 months of that first filing, a subsequent patent application for the same invention can be filed claiming this "priority right"

It was published so we can read it in august 2020.

Why is it relevant - because we dont know the special cooling soluton for ps5,. Coincidence maybe, but unlikely.

 

[Jason28]

For anyone wondering, that's how liquid metal used in cooling looks like

Spoiler

 

[Krisprolls]

For anyone wondering, that's how liquid metal used in cooling looks like

Err... You may want to put a NSFW tag on this one

 

[kruis]

For anyone wondering, that's how liquid metal used in cooling looks like

Spoiler

Is that what you told your mom?

 

[M1chl]

Hype about hypothetical termal paste, hmm that's new. Honestly I don't see it being used unless Sony came with some new formula.

 

[Bo_Hazem]

For anyone wondering, that's how liquid metal used in cooling looks like

Spoiler

"Has a tiny dick and smaller e-peen"

Well, I'm impressed.

 

[Calverz]

Never seen any noisy PS4 before, I think the lineup we get is probably a good one. It's said that there are like 20 of those, and of course each should be pointed at some markets.

If you seriously need that God of War video, I'll try to make one for you if you don't believe me.

Load up modern warfare remastered and literally just go to the multiplayer menu. I thought mine was about to take off. Bought it on launch day.

 

[Bo_Hazem]

No we have not seen this posted for more than a year. Link ?

You wont have read it then unless you worked in the patent office or for Sony.



It was published so we can read it in august 2020.

Why is it relevant - because we dont know the special cooling soluton for ps5,. Coincidence maybe, but unlikely.

You'll have a hard time to teach some of those light-minded posters around here, they're not used to such dense topics, but funnily they keep whine about the speculation thread as they can't stand tall there when faced with detailed analyses/speculations.

Here is the older one, that's most likely used in the Dev-Kit, and it clearly says (Sony Interactive Entertainment), but that smart guy is here only to derail the thread to another shit thread:

A guy tried to color it to make it easier, of course we already analyzed that:

Now that new one seems more than likely the one used in the retail version, there are like 3 types of the same draw:

There is a significant amount of pipes penetrating through the motherboard, as it seems, six right under what it seems the APU, more undeneath, and some tiny ones around other chips.

Here is the full patent details translated through google translate:

Specification
Title of invention: Electronic device, semiconductor device, insulating sheet, and method for manufacturing semiconductor device
Technical field
[0001]
　The present disclosure relates to a technique for improving cooling performance of a semiconductor device.
Background technology
[0002]
　A semiconductor chip that constitutes a semiconductor device that functions as a Central Processing Unit (CPU), a Graphics Processing Unit (GPU), or the like is thermally connected to a radiator such as a heat sink or a heat pipe and is cooled. There are many electronic devices in which grease is used as a heat conductive material provided between a semiconductor chip and a radiator.
Prior art documents
Patent literature
[0003]
Patent Document 1: JP 2012-69902 A
Patent Document 2: JP 2007-335742 A
Summary of the invention
Problems to be Solved by the Invention
[0004]
　However, when the amount of heat generated by the semiconductor chip increases, it becomes difficult to sufficiently cool the semiconductor chip due to the thermal resistance of the grease. In the semiconductor device of Patent Document 2, instead of grease, a metal that is liquefied by heat during operation of the semiconductor chip is used as a heat conductive material between the semiconductor chip and the radiator. When such a metal is used, the thermal resistance between the semiconductor chip and the radiator is lowered, and the cooling performance of the semiconductor chip can be improved.
[0005]
　In a structure in which a fluid metal is used as a heat conductive material, it is possible to limit the range in which the heat conductive material spreads even when the semiconductor device changes its posture or vibrates in order to sufficiently exert its cooling performance. is important. Further, it is important that the force sufficiently acts on the semiconductor chip when the radiator is pressed against the semiconductor chip. That is, the adhesion between the semiconductor chip and the radiator is also important.
Means for solving the problems
[0006]
　An example of an electronic device proposed in the present disclosure includes a semiconductor chip, a first region that is disposed below the semiconductor chip and is a region in which the semiconductor chip is mounted, and a circuit pattern and at least one of electrical components. A substrate having a second region, which is a region in which the conductor element including is provided, a radiator arranged above the semiconductor chip, and between the radiator and the semiconductor chip. And a heat conductive material. The electronic device further includes a seal member surrounding the heat conductive material, and an insulating portion covering the conductor element, the heat conductive material having conductivity, and at least during operation of the semiconductor chip. It has fluidity. According to this electronic device, the range in which the heat conductive material spreads can be limited by the seal member and the insulating portion. In this electronic device, the insulating portion is, for example, a cured portion of an insulating material or a sheet formed of the insulating material.
[0007]
　Another example of the electronic device proposed in the present disclosure is a semiconductor chip, a first region that is arranged below the semiconductor chip and is a region in which the semiconductor chip is mounted, at least a circuit pattern and an electric component. A substrate having a second region, which is a region in which a conductor element including one is provided, a radiator disposed above the semiconductor chip, and between the radiator and the semiconductor chip And a heat conductive material. The electronic device further includes an insulating portion covering the conductor element, the heat conducting material has conductivity, has fluidity at least during operation of the semiconductor chip, and has at least one of the upper surfaces of the insulating portion. The distance from the portion to the lower surface of the radiator is larger than the distance from the upper surface of the semiconductor chip to the lower surface of the radiator. According to this electronic device, the range in which the heat conductive material spreads can be limited to the region where the conductor element does not exist. Further, the adhesion between the radiator and the semiconductor chip can be secured.
[0008]
　An example of a semiconductor device proposed in the present disclosure includes a semiconductor chip, a first region that is arranged below the semiconductor chip and is a region where the semiconductor chip is mounted, and a circuit pattern and at least one of electrical components. A substrate having a second region, which is a region in which the conductor element including is provided, and an insulating sheet covering the conductor element. According to this semiconductor device, the range in which the heat conductive material spreads can be limited to the region where the conductor element does not exist.
[0009]
　Another example of the semiconductor device proposed in the present disclosure is a semiconductor chip, a first region that is arranged below the semiconductor chip and is a region in which the semiconductor chip is mounted, and at least a circuit pattern and an electrical component. A substrate having a second region, which is a region in which a conductor element including one is provided, and an insulating portion covering the conductor element. A height of at least a part of the upper surface of the insulating portion with respect to the substrate is smaller than a height of the upper surface of the semiconductor chip with respect to the substrate. According to this semiconductor device, the range in which the heat conductive material spreads can be limited to the region where the conductor element does not exist. Further, the adhesion between the radiator and the semiconductor chip can be secured.
[0010]
　An insulating sheet proposed in the present disclosure has a semiconductor chip and a substrate arranged below the semiconductor chip, and has a first region in which the semiconductor chip is mounted, a circuit pattern, and an electrical component. An insulating sheet for attaching a second region, which is a region in which a conductor element including at least one of the above is provided, to a semiconductor device included in the substrate. The insulating sheet has an upper wall located above the conductor element and an inner wall located inside the upper wall and extending downward from the upper wall, and a housing portion that covers the conductor element and the inner wall. And an attached portion which is connected to and is located at a position lower than the upper wall. According to this insulating sheet, the range in which the heat conductive material spreads can be limited to the region where the conductor element does not exist. Further, even when the difference in height between the conductor element and the semiconductor chip is small, the insulating sheet can be attached to the substrate relatively easily.
[0011]
　An example of a method of manufacturing a semiconductor device proposed in the present disclosure includes a first region that is arranged below the semiconductor chip and is a region where the semiconductor chip is mounted, and at least one of a circuit pattern and an electric component. The method includes the steps of preparing a substrate having a second region, which is a region in which the conductor element is provided, and covering the conductor element with an insulating portion. In the step of covering the conductor element with the insulating portion, the height of the upper surface of the insulating portion with respect to the substrate is smaller than the height of the upper surface of the semiconductor chip with respect to the substrate. According to this method, the range in which the heat conductive material spreads can be limited to a region where no conductor element such as an electric component exists. Further, the adhesion between the radiator and the semiconductor chip can be secured.
Brief description of the drawings
[0012]
FIG. 1A is a cross-sectional view showing an example of an electronic device proposed in the present disclosure.
FIG. 1B is an enlarged view of a main part shown in FIG. 1A.
FIG. 2 is a plan view of a semiconductor device included in an electronic device.
FIG. 3A is a cross-sectional view showing a modified example of the position of the seal member.
FIG. 3B is a cross-sectional view showing a modified example of the position of the seal member.
FIG. 3C is a cross-sectional view showing a modified example of the position of the seal member.
FIG. 4 is a diagram for explaining a manufacturing process of the electronic device.
FIG. 5A is a cross-sectional view showing another example of the electronic device proposed in the present disclosure.
FIG. 5B is an enlarged view of FIG. 5A.
FIG. 6 is a perspective view of an insulating sheet included in the electronic device shown in FIG. 5A.
FIG. 7 is a view showing a modified example of the mounting structure of the insulating sheet.
FIG. 8 is a diagram showing yet another modified example of the insulating sheet attachment structure.
FIG. 9A is a cross-sectional view showing yet another example of the electronic device proposed in the present disclosure.
FIG. 9B is an enlarged view of FIG. 9A.
MODE FOR CARRYING OUT THE INVENTION
[0013]
　The semiconductor device and electronic equipment proposed in the present disclosure will be described below. In this specification, the semiconductor device 10 and the electronic device 1 will be described as examples of the semiconductor device and the electronic device proposed in the present disclosure. The electronic device proposed in the present disclosure is, for example, a game machine, a development machine for executing various programs under development (for example, a game program), an information processing device different from the game machine (for example, a personal computer, It can be applied to a server device, a control device of a transportation vehicle).
[0014]
　In the following description, the directions indicated by X1-X2 in FIG. 1 are referred to as horizontal directions, and the directions indicated by Z1 and Z2 are referred to as upper and lower directions, respectively. These directions are used to describe the relative positional relationship of the elements (parts, members, parts) of the electronic device 1, and do not specify the posture of the electronic device 1 when in use.
[0015]
[Basic Configuration] As
　shown in FIG. 1A, the electronic device 1 includes a semiconductor device 10, a circuit board 2, and a radiator 50. In the description in this specification, the circuit board 2 is arranged below the semiconductor device 10, and the radiator 50 is arranged above the semiconductor device 10.
[0016]
　The semiconductor device 10 has a semiconductor chip 11 and a substrate (package substrate) 17 located below the semiconductor chip 11. The semiconductor chip 11 functions as a CPU or GPU. The semiconductor chip 11 is, for example, flip-chip mounted on the upper surface 17a of the substrate 17 (see FIG. 1B). That is, the plurality of solder bumps 18 formed on the lower surface of the semiconductor chip 11 and the bumps (not shown) formed on the substrate 17 are soldered. An underfill 23 is filled in the gap between the semiconductor chip 11 and the substrate 17. The underfill 23 is made of resin, for example, and is hardened between the semiconductor chip 11 and the substrate 17. The method of mounting the semiconductor chip 11 on the substrate 17 may be wire bonding, tape bonding, or the like.
[0017]
　In addition to the semiconductor chip 11, a plurality of electric components are mounted on the upper surface 17a of the substrate 17. In the example shown in FIGS. 1A and 1B, a plurality of capacitors 16 are mounted on the board 17. In this specification, in the semiconductor device 10, a region in which the semiconductor chip 11 is arranged is referred to as a first region A1 (see FIGS. 1A and 2), and a plurality of electric components such as a capacitor 16 are arranged in the semiconductor. The area around the chip 11 is referred to as a second area A2 (see FIGS. 1A and 2). In the second area A2, a circuit pattern (including a through hole and a via) may be formed together with the mounting of the capacitor 16 or instead of mounting the capacitor 16. A stiffener 14, which will be described later, is attached to the outer peripheral edge of the substrate 17. The second area A2 is an area between the inner surface of the stiffener 14 and the side surface of the semiconductor chip 11. An insulating portion 15 described later is formed in the second area A2.
[0018]
　The stiffener 14 is a square frame made of metal and is attached to the outer peripheral edge of the substrate 17. As the material of the stiffener 14, for example, aluminum or copper can be used. An adhesive or solder may be used to attach the stiffener 14 to the substrate 17. The stiffener 14 can reduce the warp of the substrate 17. A first area A1 and a second area A2 are defined inside the stiffener 14.
[0019]
　As shown in FIG. 1A, the board 17 is mounted on the circuit board 2 included in the electronic device 1. A ball grid array (BGA) 19 is formed on the lower surface of the substrate 17, for example. That is, a plurality of solder bumps arranged in a grid pattern are formed on the lower surface of the substrate 17. The BGA 19 is soldered to a conductor pad formed on the circuit board 2. The method of mounting the board 17 on the circuit board 2 is not necessarily limited to the method using the BGA 19, and various other mounting methods may be adopted. For example, a PGA (Pin Grid Array) having pin-shaped lead terminals or an LGA (Land Grid Array) in which electrodes are arranged in an array may be used. In addition to the BGA 19, a plurality of capacitors 21 may be mounted on the lower surface of the substrate 17.
[0020]
　The radiator 50 is, for example, a heat sink, and has a plate-shaped heat receiving portion 50a and fins 50b as shown in FIG. 1A. The fins 50b are formed, for example, above the heat receiving portion 50a. As the heat receiving part 50a, a vapor chamber composed of a plate-shaped container and a working liquid contained in the container may be used. As yet another example, the radiator 50 may include a heat pipe. The radiator 50 may be urged toward the semiconductor chip 11 by an elastic member (not shown) (for example, a spring). In addition, the electronic device 1 may include a cooling fan (not shown) that forms an air flow toward the radiator 50.
[0021]
[Heat Conductive Material] As
　shown in FIG. 1A, the lower surface 50c of the radiator 50 faces the upper surface 11a of the semiconductor chip 11. The heat conducting material 31 is disposed between the lower surface 50c of the radiator 50 and the upper surface 11a of the semiconductor chip 11. The heat conductive material 31 is in direct contact with the lower surface 50c of the radiator 50 and the upper surface 11a of the semiconductor chip 11. The radiator 50 and the semiconductor chip 11 are thermally connected by the heat conductive material 31.
[0022]
　The heat conductive material 31 is a material having fluidity. More specifically, the heat conductive material 31 is a material having fluidity at least when the semiconductor chip 11 operates. Preferably, the heat conductive material 31 is in a liquid or paste state at least during the operation of the semiconductor chip 11. The heat-conducting material 31 is a material that has fluidity when the semiconductor chip 11 is operating, but has no fluidity when the semiconductor chip 11 is not operating (in other words, room temperature (eg, 20° C.)). Good. That is, the heat conductive material 31 may be a material that exhibits fluidity due to the heat generated by the operation of the semiconductor chip 11. The non-operating state of the semiconductor chip 11 is, for example, during manufacturing, transportation, or when the electronic device is powered off. Unlike this, the heat conductive material 31 may be a material that has fluidity even when the semiconductor chip 11 is not operating. That is, the heat conductive material 31 may be in any state such as liquid, paste, powder, plate, and block when the chip is not operating.
[0023]
　Due to the fluidity of the heat-conducting material 31, the upper surface 11a of the semiconductor chip 11 and the lower surface 50c of the heat sink 50 are separated from each other due to slight warpage of the upper surface 11a of the semiconductor chip 11 and micro unevenness of the lower surface 50c of the heat sink 50. The thermal resistance between them is reduced, and the cooling performance of the semiconductor chip 11 can be improved. Furthermore, if the heat conductive material 31 has fluidity at room temperature, the radiator 50 can be separated from the semiconductor chip 11. As a result, for example, when repairing the electronic device 1, it is possible to perform the repair work after removing the radiator 50 from the semiconductor device 10. Further, the heat conductive material 31 is a material having conductivity, in other words, a material having high heat conductivity.
[0024]
　As the heat conductive material 31, for example, a liquid metal that is liquid at room temperature can be used. Liquid metals include, for example, Ga (melting point: 29.8°C, thermal conductivity 40.6W/mk), In (melting point: 156.4°C, thermal conductivity 81.6W/mk), and Sn (melting point: 231.97°C, thermal conductivity 66.6). It is possible to use at least one low melting point metal selected from the group consisting of W/mk) or an alloy containing at least one low melting point metal. Specific examples of the alloy include In-Ag, Sn-Ag-Cu, In-Sn-Bi and the like. As another example of the heat conductive material 31, a conductive paste may be used. As the conductive paste, a silver paste in which silver powder is dispersed in resin can be used.
[0025]
　The heat conductive material 31 is preferably applied to the entire upper surface 11 a of the semiconductor chip 11. The heat conductive material 31 may contact a part of the side surface 11b (see FIG. 1B) of the semiconductor chip 11. A region of the lower surface 50c of the radiator 50 to which the heat conductive material 31 is applied may be larger than the semiconductor chip 11.
[0026]
[Seal Member and Insulating Part] Since the
　heat conducting material 31 has fluidity, it is necessary to limit the range in which the heat conducting material 31 spreads in order to exert the cooling performance. Further, since the heat conductive material 31 has conductivity, it is possible to limit the range in which the heat conductive material 31 spreads so that the heat conductive material 31 does not touch the capacitors 16 and the circuit patterns provided in the second area A2. Will be needed. In addition, it is not desirable that the heat conductive material 31 is in contact with other parts of the electronic device 1 outside the semiconductor device 10 (outside the stiffener 14). Therefore, the electronic device 1 has the following structure.
[0027]
[Insulating Section] As
　shown in FIG. 1A, the semiconductor device 10 has an insulating section 15 that covers the conductor element, that is, the capacitor 16 and the circuit pattern provided in the second region A2 (see FIG. 2). In the example of the semiconductor device 10, the insulating portion 15 is formed between the inner surface of the stiffener 14 and the side surface 11b of the semiconductor chip 11, as shown in FIG. 1B. The insulating portion 15 is formed over the entire second region A2 and is in contact with the inner surface of the stiffener 14 and the side surface 11b of the semiconductor chip 11. For this reason, the inner peripheral portion of the insulating portion 15 overlaps with the upper side of the outer peripheral portion 23a (see FIG. 1B) of the underfill 23 formed between the semiconductor chip 11 and the substrate 17. The insulating portion 15 is not formed in the first region A1, and the upper surface 11a of the semiconductor chip 11 is exposed from the insulating portion 15.
[0028]
　The insulating part 15 is resin, for example. More specifically, the insulating portion 15 is a portion where a liquid or gel resin is cured. As the insulating portion 15, for example, an ultraviolet curable resin can be used. The resin is applied so as to cover the conductor elements (that is, the capacitors 16 and the circuit pattern) in the second area A2, and then is cured by receiving ultraviolet rays to form the insulating portion 15. The insulating portion 15 can prevent the heat conductive material 31 from coming into contact with the conductor element in the second region A2.
[0029]
　As shown in FIG. 1B, the height H2 of the upper surface 15a of the insulating portion 15 (the height from the upper surface 17a of the substrate 17) is the height H1 of the upper surface 11a of the semiconductor chip 11 (the height from the upper surface 17a of the substrate 17). Smaller than). As a result, the distance from the upper surface 15a of the insulating portion 15 to the lower surface 50c of the radiator 50 is larger than the distance from the upper surface 11a of the semiconductor chip 11 to the lower surface 50c of the radiator 50. Therefore, when the radiator 50 is pushed toward the semiconductor chip 11, interference between the insulating portion 15 and the lower surface 50c of the radiator 50 does not occur, and the adhesiveness between the radiator 50 and the semiconductor chip 11 is sufficient. Can be secured.

Continue...

 

[Bo_Hazem]

[0030]
　As shown in FIG. 1B, in the example of the semiconductor device 10, the height of the upper surface 16a of the capacitor 16 (the height from the upper surface 17a of the substrate 17) is smaller than the height H1 of the upper surface 11a of the semiconductor chip 11. The insulating portion 15 preferably covers the upper surface 16 a of the capacitor 16. In other words, it is preferable that the entire capacitor 16 be covered with the insulating portion 15. By doing so, it is possible to reliably prevent the heat conductive material 31 from coming into contact with the capacitor 16. The entire capacitor 16 may be embedded in the insulating portion 15.
[0031]
　Further, as shown in FIG. 1B, the height H3 of the upper surface 14a of the stiffener 14 (the height from the upper surface 17a of the substrate 17) is smaller than the height H1 of the upper surface 11a of the semiconductor chip 11. The height H2 of the upper surface 15a of the insulating portion 15 is smaller than the height H3 of the upper surface 14a of the stiffener 14. Therefore, when the radiator 50 is pushed toward the semiconductor chip 11, interference between the stiffener 14 and the lower surface 50c of the radiator 50 does not occur, and sufficient adhesion between the radiator 50 and the semiconductor chip 11 is ensured. Can be done. Unlike the example shown in FIG. 1B, the height H2 of the upper surface 15a of the insulating portion 15 may be the same as the height H3 of the upper surface 14a of the stiffener 14.
[0032]
　When the circuit pattern exposed on the upper surface 17a of the substrate 17 and the conductor element such as the capacitor 16 are formed only in a part of the second area A2, the insulating portion 15 is formed only in this part of the second area A2. It may be formed. For example, as shown in FIG. 3C, the insulating portion 15 may be separated from the side surface 11b of the semiconductor chip 11. In the example shown in this figure, a seal member 33 described later is arranged between the insulating portion 15 and the side surface 11b of the semiconductor chip 11. Such an insulating portion 15 may be a portion where a liquid or gel resin (specifically, an ultraviolet curable resin) supplied between the seal member 33 and the stiffener 14 is cured.
[0033]
[Seal Member] The
　electronic device 1 has a seal member 33 (see FIG. 1A) surrounding the heat conductive material 31. A square opening is formed in the seal member 33 in plan view, and the heat conductive material 31 and the semiconductor chip 11 are located inside the seal member 33 (see FIG. 2 ). As shown in FIG. 1B, the seal member 33 is located between the semiconductor device 10 and the lower surface 50 c of the radiator 50, seals the gap between them, and retains the heat conductive material 31 inside the semiconductor device 10. The seal member 33 is separated from the outer peripheral edge (side surface 11b) of the semiconductor chip 11. Therefore, it is possible to apply the above-described heat conductive material 31 to the entire upper surface 11a of the semiconductor chip 11. That is, it is possible to continuously apply the heat conductive material 31 to the four edges of the upper surface 11a.
[0034]
　The seal member 33 is disposed, for example, between the upper surface 15a of the insulating portion 15 and the lower surface 50c of the radiator 50, and is sandwiched by the two surfaces 15a and 50c. The seal member 33 may be attached to the lower surface 50c of the radiator 50. The seal member 33 may be bonded to the lower surface 50c of the radiator 50, for example. On the contrary, the seal member 33 may be attached to the upper surface 15 a of the insulating portion 15. The seal member 33 may be bonded to the upper surface 15a of the insulating portion 15, for example.
[0035]
　Further, the seal member 33 may have a portion located above the capacitor 16 covered by the insulating portion 15. That is, the seal member 33 may have a portion that overlaps with the capacitor 16 in a plan view of the semiconductor device 10. According to the semiconductor device 10 having such a positional relationship, the sealing member 33 having a large width in the horizontal direction can be adopted, and the sealing property can be improved. A space S in which air exists is formed inside the seal member 33.
[0036]
　The seal member 33 is formed of, for example, a material having a cushioning property. That is, the seal member 33 is formed of a material that allows a change in the thickness of the seal member 33 in the direction in which the upper surface 11a of the semiconductor chip 11 and the lower surface 50c of the radiator 50 face each other, that is, the vertical direction. The material of the seal member 33 is, for example, rubber, sponge, foamable resin, silicone, or the like. By doing so, even when the radiator 50 is pressed against the semiconductor chip 11 by the elastic member, the load acting on the semiconductor device 10 through the seal member 33 can be reduced.
[0037]
　The position of the seal member 33 is not limited to the example shown in FIG. 1B. For example, as shown in FIG. 3A, the seal member 33 may be located between the upper surface 15a of the insulating portion 15 and the lower surface 50c of the radiator 50, and may avoid the position of the capacitor 16. That is, the seal member 33 may be arranged so as not to overlap the capacitor 16 in a plan view. By doing so, it is possible to prevent the load from acting on the capacitor 16 from the radiator 50 through the seal member 33.
[0038]
　In still another example, as shown in FIG. 3B, the seal member 33 may be disposed between the upper surface 14a of the stiffener 14 and the lower surface 50c of the radiator 50, and may be sandwiched between the two surfaces 14a and 50a. . The stiffener 14 is made of metal and has higher rigidity than the insulating portion 15. Since the seal member 33 is pressed against the stiffener 14 having high rigidity, the contact pressure between the seal member 33 and the stiffener 14 can be improved. As a result, the sealing property of the seal member 33 can be improved.
[0039]
　As described above, the insulating portion 15 may be formed at the position of the capacitor 16 and separated from the side surface 11b of the semiconductor chip 11. In this case, as shown in FIG. 3C, the sealing member 33 may be located inside the insulating portion 15. The seal member 33 may be disposed between the upper surface 17a of the substrate 17 and the lower surface 50c of the radiator 50, and may be sandwiched between the two surfaces 17a and 50c.
[0040]
　That is, the inner peripheral surface 33 a of the seal member 33 (the surface surrounding the semiconductor chip 11) is located outside the outer edge of the semiconductor chip 11 and does not have to overlap the semiconductor chip 11. The outer peripheral surface 33b (the surface facing the inner peripheral surface 33a) of the seal member 11 may be located inside the outer edge of the semiconductor device 10 (the outer edge of the stiffener 14 in the example of the semiconductor device 10).
[0041]
[Manufacturing Method]
　An example of a method of manufacturing the electronic device 1 and the semiconductor device 10 will be described.
[0042]
　First, the semiconductor chip 11, the capacitor 16, and the stiffener 14 are mounted on the substrate 17. An underfill 23 is filled between the semiconductor chip 11 and the substrate 17. A liquid or gel UV curable resin is supplied around the capacitor 16. That is, the ultraviolet curable resin is stored between the stiffener 14 and the semiconductor chip 11. The amount of resin is such that the upper surface 16a of the capacitor 16 is embedded in the resin. The resin is irradiated with ultraviolet rays to be cured. Thereby, the insulating part 15 is obtained. As shown in FIG. 3C, when manufacturing a structure in which the insulating portion 15 is formed between the seal member 33 and the stiffener 14, after the seal member 33 is attached to the substrate 17, the seal member 33 and the stiffener 14 are attached. The insulating portion 15 can be formed by supplying a liquid or gel UV curable resin between the insulating portion 15 and the resin.
[0043]
　Next, as shown in FIG. 4, the heat conductive material 31 is applied to the upper surface 11a of the semiconductor chip 11 and the lower surface 50c of the radiator 50. It is desirable to spread the heat conducting material 31 over the entire upper surface 11a of the semiconductor chip 11 by utilizing the fluidity of the heat conducting material 31. Further, it is desirable that the heat conductive material 31 is spread over the entire area corresponding to the semiconductor chip 11 on the lower surface 50c of the radiator 50. The area of the radiator 50 to which the heat conductive material 31 is applied is preferably larger than the size of the semiconductor chip 11.
[0044]
　Further, the seal member 33 is attached to the lower surface 50c of the radiator 50. Then, the radiator 50 is attached to the semiconductor chip 11, and the radiator 50 is pressed against the semiconductor chip 11 using an elastic member such as a spring. As a result, the lower surface 50c of the radiator 50 comes into close contact with the upper surface 11a of the semiconductor chip 11.
[0045]
　In the method of applying the heat conductive material 31 to only one of the upper surface 11a of the semiconductor chip 11 and the lower surface 50c of the radiator 50, when the radiator 50 is attached to the semiconductor chip 11, the heat conductive material 31 is applied to the other surface. , And the thermal resistance between the semiconductor chip 11 and the radiator 50 increases. As shown in FIG. 4, such a problem can be solved by applying the heat conductive material 31 to the upper surface 11a of the semiconductor chip 11 and the lower surface 50c of the radiator 50.
[0046]
[Modification]
　FIG. 5A is a sectional view showing a modification of the electronic device 1. FIG. 5B is an enlarged view of FIG. 5A. In these drawings, the electronic device 1 has a semiconductor device 110 as a modification of the semiconductor device 10. In this figure, the same parts as those described above are designated by the same reference numerals.
[0047]
　The semiconductor device 110 has an insulating sheet 115 (see FIG. 5A) as an insulating portion that covers conductor elements such as the capacitor 16 and the circuit pattern. The insulating sheet 115 is a resin molded sheet. As the material of the insulating sheet 115, for example, engineering plastic such as polycarbonate or polyamide can be used. FIG. 6 is a perspective view of the insulating sheet 115. In FIG. 5A and FIG. 5B, the insulating sheet 115 is shown with a reduced width in the left-right direction as compared with the insulating sheet 115 shown in FIG.
[0048]
　As shown in FIG. 5B, the insulating sheet 115 has a housing portion 115a. The capacitor 16 is arranged inside the accommodation portion 115a (a space defined by the accommodation portion 115a and the upper surface 17a of the substrate 17). The housing 115a has an upper wall 115b, an inner wall 115c, and an outer wall 115d. The upper wall 115b is located above the capacitor 16. The inner wall 115c is located inside the capacitor 16 (that is, located closer to the center of the semiconductor device 10 with respect to the capacitor 16), and extends downward from the upper wall 115b toward the substrate 17. The outer wall 115d is located outside the capacitor 16, and is lowered from the upper wall 115b toward the substrate 17. Therefore, a space for arranging the capacitor 16 is formed inside the accommodation portion 115a.
[0049]
[Height of accommodation part] As
　shown in FIG. 5B, the height H4 of the highest portion of the upper surface of the insulating sheet 115 (the highest portion of the upper surface of the upper wall 115b) is the height of the upper surface 11a of the semiconductor chip 11. It is smaller than H1. As a result, the distance from the upper surface of the insulating sheet 115 to the lower surface 50c of the radiator 50 is larger than the distance from the upper surface 11a of the semiconductor chip 11 to the lower surface 50c of the radiator 50. Therefore, when the radiator 50 is pushed toward the semiconductor chip 11, the insulation sheet 115 and the lower surface 50c of the radiator 50 do not interfere with each other, and the adhesiveness between the radiator 50 and the semiconductor chip 11 is sufficient. Can be secured.
[0050]
　As shown in FIG. 5B, the height H3 of the upper surface 14a of the stiffener 14 is smaller than the height H1 of the upper surface 11a of the semiconductor chip 11. The height H4 of the upper surface of the insulating sheet 115 is smaller than the height H3 of the upper surface 14a of the stiffener 14. When the radiator 50 is pushed toward the semiconductor chip 11, interference between the stiffener 14 and the lower surface 50c of the radiator 50 does not occur, and sufficient adhesion between the radiator 50 and the semiconductor chip 11 can be ensured. Unlike the example shown in FIG. 5B, the height H4 of the upper surface of the insulating sheet 115 may be the same as the height H3 of the upper surface 14a of the stiffener 14.
[0051]
　A metal plate having a size suitable for the size of the semiconductor chip 11 may be welded to the lower surface 50c of the radiator 50. In this case, the height H4 of the upper surface of the insulating sheet 115 may be higher than the height H1 of the upper surface 11a of the semiconductor chip 11. According to this structure, by adjusting the thickness of the metal plate, the distance from the upper surface of the insulating sheet 115 to the lower surface 50c of the radiator 50 can be adjusted from the upper surface 11a of the semiconductor chip 11 to the lower surface of the radiator 50 (the lower surface of the metal plate). ) Can be greater than the distance. As a result, the insulation sheet 115 and the lower surface 50c of the radiator 50 do not interfere with each other, and sufficient adhesion between the radiator 50 and the semiconductor chip 11 can be ensured.
[0052]
[
　Attached Part] As shown in FIG. 5B, the insulating sheet 115 is attached to the semiconductor device 110. In one example, the insulating sheet 115 has attached portions 115h and 115i that form the edge of the accommodation portion 115a and are attached to the substrate 17. The attached portions 115h and 115i are attached to the substrate 17 with the adhesive E1. As the adhesive E1, for example, an ultraviolet curable resin can be used.
[0053]
　As shown in FIG. 5B, the inner attached portion 115h is connected to the lower end of the inner wall 115c. The attached portion 115h extends horizontally from the lower edge of the inner wall 115c, for example, and is arranged along the substrate 17. The attached portion 115h is located between the capacitor 16 and the side surface 11b of the semiconductor chip 11. The position of the attached portion 115h is lower than the upper wall 115b of the housing portion 115a. This shape of the insulating sheet 115 facilitates the work for insulating the capacitor 16 from the heat conductive material 31. That is, in the structure illustrated in FIG. 1A, when the difference between the height of the upper surface 16 a of the capacitor 16 and the height of the upper surface 11 a of the semiconductor chip 11 is small, the resin injection height is set so as not to exceed the upper surface 15 a of the insulating portion 15. There is a problem that it is difficult to control the size. On the other hand, according to the shape of the insulating sheet 115 having the attached portion 115h at a position lower than the upper wall 115b, even if the difference between the height of the upper surface 16a of the capacitor 16 and the height of the upper surface 11a of the semiconductor chip 11 is small. The insulating sheet 115 can be easily attached to the semiconductor device 10. The attached portion 115h extends in the direction along the surface of the substrate 17. Therefore, the attachment strength of the attached portion 115h to the substrate 17 can be increased. The attached portion 115h does not have to extend in the direction along the surface of the substrate 17. In this case, the lower edge of the inner wall 115c may be bonded to the substrate 17 and function as the attached portion 115h.
[0054]
　As shown in FIG. 5B, the outer mounted portion 115i is connected to the lower edge of the outer wall 115d. The attached portion 115i extends in the horizontal direction from the lower edge of the outer wall 115d, for example, and is arranged along the substrate 17. The position of the attached portion 115i is also lower than that of the upper wall 115b. This shape of the insulating sheet 115 facilitates the work for insulating the capacitor 16 from the heat conductive material 31. That is, in the structure illustrated in FIG. 1A, when the difference between the height of the upper surface 16a of the capacitor 16 and the height of the upper surface 14a of the stiffener 14 is small, the resin injection height is set so as not to exceed the upper surface 15a of the insulating portion 15. There is a problem that it is difficult to manage On the other hand, according to the shape of the insulating sheet 115 having the attached portion 115i at a position lower than the upper wall 115b, even if the difference between the height of the upper surface 16a of the capacitor 16 and the height of the upper surface 14a of the stiffener 14 is small, The insulating sheet 115 can be easily attached to the semiconductor device 10. Further, the attached portion 115i extends in the direction along the surface of the substrate 17. Therefore, the attachment strength of the attached portion 115i to the substrate 17 can be increased. The attached portion 115i may not extend in the direction along the surface of the substrate 17. In this case, the lower edge of the outer wall 115d may be bonded to the substrate 17 and function as the attached portion 115i.
[0055]
　In the structure shown in FIG. 5B, the inner attached portion 115h is in direct contact with the upper surface 17a of the substrate 17. However, the attached portion 115h may be indirectly attached to the substrate 17. For example, the attached portion 115h may be arranged above the outer peripheral portion 23a of the underfill 23 and adhered to the underfill 23. As still another example, the attached portion 115h may be formed below the underfill 23 and attached to the upper surface 17a of the substrate 17 by the underfill 23. According to this structure, it is possible to reduce the work process for bonding the attached portion 115h.
[0056]
　Attached portions 115h and 115i are provided on the entire edge of the accommodation portion 115a, and the inside of the accommodation portion 115a is sealed. As shown in FIG. 6, the insulating sheet 115 has, for example, a rectangular shape in which an opening in which the semiconductor chip 11 is arranged is formed. The insulating sheet 115 has, for example, four accommodating portions 115a along the four side surfaces 11b of the semiconductor chip 11, respectively. The insulating sheet 115 has an attached portion 115h on the entire inner peripheral edge thereof and an attached portion 115i on the entire outer peripheral edge thereof. The positions of the attached portions 115h and 115i are not limited to this. For example, the edge of the insulating sheet 115 may not be attached to the substrate 17 at a position where insulation is unnecessary.
[0057]
　The shape of the insulating sheet 115 is not limited to the example shown in FIG. For example, when the electric component such as the capacitor 16 exists only in one or two directions with respect to the semiconductor chip 11, the insulating sheet 115 does not have to have a shape surrounding the semiconductor chip 11. For example, the insulating sheet 115 may be present on any one or two of the right side, the left side, the front side, and the rear side of the semiconductor chip 11.
[0058]
　In the structure shown in FIG. 5B, the outer attached portion 115 i is in direct contact with the upper surface 17 a of the substrate 17. However, the attached portion 115i may be indirectly attached to the substrate 17. For example, the attached portion 115i may be located on the upper surface 14a of the stiffener 14 as shown in FIG. The attached portion 115i may be adhered to the upper surface 14a. In this case, the position of the attached portion 115i is preferably lower than the upper surface 11a of the semiconductor chip 11. With this configuration, when the radiator 50 is pressed against the semiconductor chip 11, the attached portion 115i does not interfere with the radiator 50, so that the adhesiveness between the radiator 50 and the semiconductor chip 11 can be secured.
[0059]
　In yet another example, the insulating sheet 115 may not have the attached portions 115i and 115h. For example, as shown in FIG. 8, an insulating material may be filled inside the housing portion 115a of the insulating sheet 115. The insulating material 115M may be a material that functions as an adhesive (for example, an ultraviolet curable resin). In this way, the insulating sheet 115 is attached to the substrate 17 by the insulating material 115M.
[0060]
[Seal Member] In the
　example shown in FIGS. 5A, 7 and 8, the seal member 33 is disposed between the upper surface 14a of the stiffener 14 and the lower surface 50c of the radiator 50, and is sandwiched by the two surfaces 14a and 50c. Has been. The stiffener 14 is made of metal and has higher rigidity than the insulating sheet 115. Since the seal member 33 is pressed against the stiffener 14 having high rigidity, the contact pressure between the seal member 33 and the stiffener 14 can be improved. As a result, the sealing property of the seal member 33 can be improved.

Continue...

 

[Bo_Hazem]

[0061]
[Manufacturing Method]
　An example of a method of manufacturing the semiconductor device 110 and the electronic device 1 including the semiconductor device 110 will be described. First, the semiconductor chip 11, the capacitor 16, and the stiffener 14 are mounted on the substrate 17. An underfill 23 is filled between the semiconductor chip 11 and the substrate 17. Next, the insulating sheet 115 is put on the capacitor 16. Then, an adhesive is applied to the attached portions 115h and 115i and cured. As a result, the inside of the housing portion 115a is sealed. An ultraviolet curable resin can be used as the adhesive. Subsequent steps may be the same as the steps for manufacturing the semiconductor device 10 and the electronic device 1 including the same.
[0062]
[Further Modification]
　FIG. 9A is a sectional view showing still another modification of the electronic apparatus 1. FIG. 9B is an enlarged view of FIG. 9A. In these drawings, the electronic device 1 has a semiconductor device 210 as a modified example of the semiconductor device 10. In this figure, the same parts as those described above are designated by the same reference numerals.
[0063]
　The semiconductor device 210 has an insulating sheet 215 (see FIG. 5A) as an insulating portion that covers conductor elements such as the capacitor 16 and the circuit pattern. The insulating sheet 215 is a resin molded sheet. As the material of the insulating sheet 215, engineering plastics such as polycarbonate and polyamide can be used as in the above-described insulating sheet 115.
[0064]
[Liquid Gasket] As
　shown in FIG. 9B, the insulating sheet 215 has an upper wall 215b located above the capacitor 16 and an inner wall 215c located inside the capacitor 16. The upper wall 215b and the inner wall 215c form a housing portion 215a that houses a conductor element such as the capacitor 16. The insulating sheet 215 is attached by the substrate 17 by the liquid gasket E2. In detail, the attached portion 215h is formed at the lower end of the inner wall 215c, and the attached portion 215h is attached by the liquid gasket E2.
[0065]
　The liquid gasket has fluidity at room temperature and is dried or homogenized after application for a certain period of time on the joint surface to form an elastic or adhesive thin layer. Examples of the material of the liquid gasket include phenol type, modified ester type, silicone type and acrylic type. By using such a liquid gasket, a high sealing property can be secured between the mounted portion 215h of the insulating sheet 215 and the substrate 17.
[0066]
　The attached portion 215h formed at the lower edge of the inner wall 215c is bent with respect to the inner wall 215c and extends along the upper surface 17a of the substrate 17. The liquid gasket E2 is arranged, for example, between the upper surface 17a of the substrate 17 and the attached portion 215h. According to this, in the process of assembling the semiconductor device 210, the liquid gasket E2 is placed on the upper side of the semiconductor chip 11, which prevents the heat conductivity between the semiconductor chip 11 and the radiator 50 from being affected. You can
[0067]
[Double Insulation Sheet] As
　shown in FIG. 9B, the semiconductor device 210 further includes an insulation sheet 225 as a sheet for covering the conductor elements such as the capacitor 16 and the circuit pattern. The insulating sheet 225 is arranged below the insulating sheet 215. The two sheets 215 and 225 overlap. (In the following description, the insulating sheet 215 is referred to as an upper sheet and the insulating sheet 225 is referred to as a lower sheet.) The lower sheet 225 is also attached to the substrate 17. More specifically, the lower sheet 225 also has an inner wall 225c inside the capacitor 16, and an attached portion 225h formed at the lower edge thereof is attached to the substrate 17.
[0068]
　A space is formed between the lower sheet 225 and the substrate 17 to accommodate the conductor elements such as the capacitor 16 and the circuit pattern. Therefore, this space is separated from the space where the heat conductive material 31 exists by a double sheet. That is, the upper sheet 215 forms a space (inside the accommodation portion 215a) partitioned from the space where the heat conductive material 31 exists, and the lower sheet 225 is inside the accommodation portion 215a and outside the lower sheet 225. It forms a space that is partitioned from.
[0069]
　The lower sheet 225 is made of a material different from that of the liquid gasket and is attached to the substrate 17. The attached portion 225h of the lower sheet 225 is bent with respect to the inner wall 225c and extends along the upper surface 17a of the substrate 17. The lower sheet 225 is attached to the substrate 17 by, for example, an adhesive tape (tape having adhesive applied on both sides) arranged between the attached portion 225h and the substrate 17. The method for attaching the lower sheet 225 to the substrate 17 is not limited to the method using an adhesive tape. For example, the attached portion 215h of the lower sheet 225 may be attached by an adhesive applied to the substrate 17.
[0070]
　As described above, the heat conductive material 31 having fluidity is disposed between the lower surface 50c of the radiator 50 and the upper surface 11a of the semiconductor chip 11. Since the heat conducting material 31 has fluidity, it may come out between the lower surface 50c of the radiator 50 and the upper surface 11a of the semiconductor chip 11 and adhere to the liquid gasket E2. When it is necessary to remove the radiator 50 and the upper sheet 215 for repair of the electronic device or replacement of defective parts, the liquid gasket E2 to which the heat conductive material 31 is attached must be handled with care so as not to scatter. .. In the semiconductor device 210, the lower sheet 225 is arranged on the lower side of the upper sheet 215, and further covers the capacitor 16 in the housing portion 215a. As a result, even if the liquid gasket E2 is scattered when the radiator 50 and the upper sheet 215 are removed, the range can be limited to the region where the capacitor 16 does not exist.
[0071]
　The lower sheet 225 and the upper sheet 215 may be formed of different materials. For example, the lower sheet 225 may be formed of a material having a lower rigidity than the upper sheet 215. Further, in the example of the semiconductor device 210, the lower sheet 225 is thinner than the upper sheet 215. An example of the material of the lower sheet 225 is polyethylene terephthalate, and the lower sheet 225 may have flexibility. By doing so, it is possible to suppress an increase in cost due to the lower sheet 225.
[0072]
　In the example shown in FIG. 9B, the attached portion 225h of the lower sheet 225 is located below the attached portion 215h of the upper sheet 215 and partially overlaps in plan view. A part of the liquid gasket E2 is arranged above the attached portion 225h of the lower sheet 225. The relationship between the two attached portions 215h and 225h is not limited to the example shown in the figure. The attached portion 225h of the lower sheet 225 may be separated from the attached portion 215h of the upper sheet 215 in the horizontal direction.
[0073]
　The semiconductor device 210 has a sealing material 33 formed of a material having a cushioning property. In the example shown in FIGS. 9A and 9B, the sealing material 33 is located above the capacitor 16 and is sandwiched between the upper sheet 215 and the lower surface 50c of the radiator 50. The sealing material 33 is arranged along the inner edge of the upper wall 215b of the upper sheet 215. The position of the sealing material 33 is not limited to the example shown in this figure, and may be located above the stiffener 14, for example.
[0074]
　In the example shown in FIGS. 9A and 9B, the sheets 215 and 225 extend to the outside in the horizontal direction beyond the position of the sealing material 33 and have upper walls 215b and 225b that cover the capacitor 16 and the stiffener 14, respectively. ing. The seats 215 and 225 have outer walls 215d and 225d, which fall from the outer edges of the upper walls 215b and 225b and cover the stiffener 14, respectively. The outer walls 215d and 225d are not attached to the stiffener 14 or the substrate 17. This can reduce the work required to attach the sheets 215 and 225 to the substrate 17.
[0075]
　Alternatively, the outer walls 215d and 225d may be attached to the stiffener 14 or the substrate 17. For example, the outer wall 215d of the upper sheet 215 is attached to the substrate 17 by a liquid gasket, and the outer wall 225d of the lower sheet 225 is attached to the substrate 17 or the stiffener 14 by a means different from the liquid gasket (eg, adhesive or double-sided sheet). May be.
[0076]
　The structures of the sheets 215 and 225 are not limited to the examples shown in these figures. For example, the sheets 215 and 225 may have an outer wall located between the stiffener 14 and the capacitor 16, similar to the example shown in FIG. 5B. Then, the lower edge (attached portion) of the outer wall may be attached to the substrate 17. In this case, the lower edge (attached portion) of the outer wall of the upper sheet 215 is attached to the substrate 17 by the liquid gasket, and the lower edge (attached portion) of the outer wall of the lower sheet 225 is different from the liquid gasket (for example, It may be attached to the substrate 17 by an adhesive or a double-sided sheet).
[0077]
[Manufacturing Method]
　An example of a method of manufacturing the semiconductor device 210 and the electronic device 1 including the semiconductor device 210 will be described. First, the semiconductor chip 11, the capacitor 16, and the stiffener 14 are mounted on the substrate 17. An underfill 23 is filled between the semiconductor chip 11 and the substrate 17. Next, the insulating sheet (lower sheet) 225 is put on the capacitor 16. Then, the attached portion 225h is attached to the substrate 17 with an adhesive sheet. Next, the liquid gasket E2 is applied on the substrate 17, and thereafter, the insulating sheet (upper sheet) 215 is covered on the lower sheet 225. Then, the attached portion 215h of the upper sheet 215 is attached to the substrate 17 with a liquid gasket. Subsequent steps may be the same as the steps for manufacturing the semiconductor device 10 and the electronic device 1 including the same.
[0078]
[Summary] In
　the electronic device 1 described above, the heat conductive material 31 is disposed between the radiator 50 and the semiconductor chip 11. The heat conductive material 31 has electrical conductivity and is fluid at least during operation of the semiconductor chip 11. The seal member 33 surrounds the heat conductive material 31, and conductor elements such as a circuit pattern and electric parts are covered with an insulating portion (insulating portion 15 or insulating sheets 115, 215 and 225). According to this structure, the range in which the heat conductive material 31 spreads can be limited by the seal member 33 and the insulating portion.
[0079]
　Further, in the electronic device 1, the heat conductive material 31 is arranged between the radiator 50 and the semiconductor chip 11. The heat conductive material 31 has conductivity and has fluidity at least when the semiconductor chip 11 operates. Conductor elements such as circuit patterns and electric parts are covered with an insulating portion (insulating portion 15 or insulating sheets 115, 215 and 225). The distance from at least a part of the upper surface of the insulating portion to the lower surface 50c of the radiator 50 is larger than the distance from the upper surface 11a of the semiconductor chip 11 to the lower surface 50c of the radiator 50. According to this structure, the range in which the heat conductive material spreads can be limited to a region where no conductor element such as an electric component exists. Further, the adhesion between the radiator and the semiconductor chip can be secured.
[0080]
　The semiconductor devices 110, 210 have insulating sheets 115, 215, 225 that cover conductor elements such as circuit patterns and electric parts. According to the semiconductor devices 110 and 210, the range in which the heat conductive material 31 spreads can be limited to the region where the conductor element does not exist.
[0081]
　The semiconductor device 10, 110, 210 has an insulating portion (insulating portion 15 or insulating sheets 115, 215, 225) that covers conductor elements such as circuit patterns and electric parts. The height of at least a part of the upper surface of the insulating portion with respect to the substrate 17 is smaller than the height of the upper surface 11a of the semiconductor chip 11 with respect to the substrate 17. According to this structure, it is possible to secure the adhesion between the radiator 50 and the semiconductor chip 11 while limiting the range where the heat conductive material 31 spreads to a region where no conductor element such as an electric component exists.
[0082]
　The insulating sheets 115 and 215 have upper walls 115b and 215b located above the conductor elements and inner walls 115c and 215c located inside the upper walls 115b and 215b and extending downward from the upper walls 115b and 215b. It has accommodating portions 115a and 215a. Further, the insulating sheets 115 and 215 have attached portions 115h and 215h that are connected to the inner walls 115c and 215c and are located lower than the upper walls 115b and 215b. According to the insulating sheets 115 and 215, the range in which the heat conductive material 31 spreads can be limited to the region where the conductor element does not exist. Further, even when the difference in height between the conductor element (for example, the capacitor 16) and the semiconductor chip 11 is small, the insulating sheets 115 and 215 can be attached to the substrate relatively easily.
[0083]
　An example of a method for manufacturing the semiconductor device 10, 110, 210 includes a step of covering a conductor element such as a circuit pattern or an electric component with an insulating portion (insulating portion 15 or insulating sheets 115, 215, 225). In the step of covering the conductor element with the insulating portion, the height of the upper surface of the insulating portion with respect to the substrate 17 is smaller than the height of the upper surface 11a of the semiconductor chip 11 with respect to the substrate 17. According to this method, the range in which the heat conductive material 31 spreads can be limited to a region where no conductor element such as an electric component exists. Further, the adhesion between the radiator 50 and the semiconductor chip 11 can be secured.
[0084]
　The invention according to the present disclosure is not limited to the electronic device, semiconductor device, insulating sheet, and manufacturing method described above, and appropriate modifications within the scope of the invention are included in the scope of the invention.

The scope of the claims
[Claim 1]
　A semiconductor chip
　, a first region that is arranged below the semiconductor chip and is a region in which the semiconductor chip is mounted, and a region in which a conductor element including at least one of a circuit pattern and an electric component is provided. An
　electron having a substrate having a second region, a radiator disposed
　above the semiconductor chip, and a heat conductive material between the radiator and the semiconductor chip
　. In the device, the
　electronic device further includes a seal member surrounding the heat conductive material, and an insulating portion covering the conductor element, the
　heat conductive material having conductivity, and at least the semiconductor chip. An
　electronic device that has fluidity during operation .
[Claim 2]
　The
　electronic device according to claim 1, wherein the sealing member is located between an upper surface of the insulating portion and a lower surface of the radiator .
[Claim 3]
　The 　electronic device according to claim 1, further comprising a stiffener attached to the substrate,
　wherein the seal member is located between an upper surface of the stiffener and a lower surface of the radiator
.
[Claim 4]
　The
　electronic device according to claim 1, wherein the seal member is located between the conductor element and a side surface of the semiconductor chip .
[Claim 5]
　The
　electronic device according to claim 1, wherein the seal member is formed of a material that allows a change in thickness of the seal member in the vertical direction .
[Claim 6]
　A semiconductor chip
　, a first region that is arranged below the semiconductor chip and is a region in which the semiconductor chip is mounted, and a region in which a conductor element including at least one of a circuit pattern and an electric component is provided. An
　electron having a substrate having a second region, a radiator disposed
　above the semiconductor chip, and a heat conductive material between the radiator and the semiconductor chip
　. In the device, the
　electronic device further includes an insulating portion covering the conductor element, the
　heat conductive material has conductivity, and has fluidity at least during operation of the semiconductor chip, and
　the upper surface of the insulating portion. The
　electronic device has a distance from at least a part thereof to a lower surface of the radiator larger than a distance from an upper surface of the semiconductor chip to the lower surface of the radiator .
[Claim 7]
　The
　electronic device according to claim 6 , wherein a height of the at least a part of the upper surface of the insulating portion with respect to the substrate is smaller than a height of the upper surface of the semiconductor chip with respect to the substrate. .
[Claim 8]
　The
　electronic device according to claim 6, wherein an upper surface of the electric component is covered with the insulating portion .
[Claim 9]
　Further, a stiffener is attached to the
　substrate, and a height of the at least part of the upper surface of the insulating portion with respect to the substrate is a height of an upper surface of the stiffener with respect to the substrate. The
　electronic device according to claim 6, which is as follows .
[Claim 10]
　The
　electronic device according to claim 6, wherein the insulating portion is a portion in which a liquid or gel resin is cured .
[Claim 11]
　The
　electronic device according to claim 6, wherein the insulating portion is a sheet that covers the conductor element .
[Claim 12]
　The 　electronic device according to claim 11, wherein the insulating portion has a first sheet and a second sheet that cover the conductor element, and the second sheet is
　arranged below the first sheet
.
[Claim 13]
　The
　electronic device according to claim 12 , wherein a material for attaching the first sheet to the substrate and a material for attaching the second sheet to the substrate are different from each other .
[Claim 14]
　The
　electronic device according to claim 11, wherein the sheet is attached to the substrate by a liquid gasket .
[Claim 15]
　The
　electronic device according to claim 6, further comprising a sealing member that surrounds the heat conductive material .
[Claim 16]
　A semiconductor chip
　, a first region that is arranged below the semiconductor chip and is a region in which the semiconductor chip is mounted, and a region in which a conductor element including at least one of a circuit pattern and an electric component is provided.
　A
　semiconductor device comprising: a substrate having a second region; and an insulating sheet covering the conductor element .
[Claim 17]
　The insulating sheet is located between the upper wall of the conductor element and the conductor element and the semiconductor chip, and is directly or indirectly attached to the substrate. and a section,
　the position of the first mounted portion is lower than the upper wall
　semiconductor device as claimed in claim 16.
[Claim 18]
　A stiffener is attached to the substrate, the
　insulating sheet is located between the upper wall of the conductor element and the conductor element and the stiffener, and is directly or indirectly attached to the substrate. 17. The 　semiconductor device according to claim 16,
　further comprising a second attached portion attached to the upper wall, the position of the second attached portion being lower than that of the upper wall
.
[Claim 19]
　The 　semiconductor device according to claim 16
　, wherein a stiffener is attached to the substrate, and an outer edge of the insulating sheet is attached to the stiffener
.
[Claim 20]
　A semiconductor chip
　, a first region that is arranged below the semiconductor chip and is a region in which the semiconductor chip is mounted, and a region in which a conductor element including at least one of a circuit pattern and an electric component is provided. a substrate and a second region,
　and an insulating portion covering the conductor element
　has a
　height relative to the at least a portion of the substrate on the upper surface of the insulating portion, the semiconductor A
　semiconductor device that is smaller than a height of the upper surface of a chip with respect to the substrate .
[Claim 21]
　A semiconductor chip and a substrate arranged below the semiconductor chip, and a conductor element including a first region in which the semiconductor chip is mounted and a conductor pattern including at least one of a circuit pattern and an electric component are provided. An insulating sheet for attaching a second region, which is a region provided on the substrate, to a semiconductor device included in the substrate
　, the upper wall being located above the conductor element, and being located inside the upper wall. An inner wall extending downward from the upper wall, and an accommodating portion that covers the conductor element
　, and an attached portion that is located at a position lower than the upper wall and that constitutes an edge portion of the accommodating portion. and it has
　an insulating sheet.
[Claim 22]
　A first region, which is disposed below the semiconductor chip, is a region in which the semiconductor chip is mounted, and a second region is a region in which a conductor element including at least one of a circuit pattern and an electric component is provided. preparing a substrate having bets,
　a step of covering the conductive element with an insulating portion
　comprises,
　in the step of covering the conductor element by the insulating portion, the upper surface of the insulating portion relative to the said substrate Is smaller than the height of the upper surface of the semiconductor chip with respect to the substrate
　.
[Claim 23]

　The manufacturing of the semiconductor device according 　to claim 22 , wherein a liquid or gel resin is applied to the conductor element as an insulating material, the liquid or gel resin is cured, and the cured resin is used as the insulating portion. Method.
[Claim 24]
　23. The sheet according to
　claim 22 , wherein the conductor element is covered with a sheet formed of an insulating material, the sheet is directly or indirectly adhered to the substrate, and the sheet adhered to the substrate is the insulating portion. Manufacturing method of semiconductor device.

Drawing
[Figure 1A]

[Figure 1B]

[ Figure 2]

[Figure 3A]

[Figure 3B]

[Figure 3C]

[Figure 4]

[Figure 5A]

[Figure 5B]

[Figure 6]

[Figure 7]

[Figure 8]

[Figure 9A]

[Fig. 9B]

 

[longdi]

You know what will lower noise? Use a bigger higher quality lower rpm fan, ahem like what you see in Series X

 

[Bo_Hazem]

Load up modern warfare remastered and literally just go to the multiplayer menu. I thought mine was about to take off. Bought it on launch day.

As said before, never had an issue, and I never cleaned mine, it's actually full of hairy dust at the moment and still pretty silent. Some markets didn't have such issues, I've never heard someone here complain about such a thing. It has to do with a certain factory/factories.

 

[Calverz]

As said before, never had an issue, and I never cleaned mine, it's actually full of hairy dust at the moment and still pretty silent. Some markets didn't have such issues, I've never heard someone here complain about such a thing. It has to do with a certain factory/factories.

You got lucky then. Its like the number one complaint with the ps4 pro. Its little wonder the design of the ps5 is so big and looking to maximise airflow.

 

[Calverz]

You know what will lower noise? Use a bigger higher quality lower rpm fan, ahem like what you see in Series X

Pretty much this. One of the reasons why i loved the og xbox one. It was super silent. I mean half the console was a fan lol

 

[Bo_Hazem]

You got lucky then. Its like the number one complaint with the ps4 pro. Its little wonder the design of the ps5 is so big and looking to maximise airflow.

I should say that mine is the second revision, got it in November 2016. Heard about the issues, so I was more into being sure than sorry so followed the suggested serial number for 2nd revision. But honestly, never heard anyone complain about it, PS4's here are everywhere, you find them even in restaurants were they get abused for endless hours yet never seen a noisy one. But what I hear from neogaf is the other way around, and I believe it, and Mark Cerny acknowledge that personally.

 

[geordiemp]

Damn I was lookking for that GIF

 

[Calverz]

I should say that mine is the second revision, got it in November 2016. Heard about the issues, so I was more into being sure than sorry so followed the suggested serial number for 2nd revision. But honestly, never heard anyone complain about it, PS4's here are everywhere, you find them even in restaurants were they get abused for endless hours yet never seen a noisy one. But what I hear from neogaf is the other way around, and I believe it, and Mark Cerny acknowledge that personally.

I think a lot of it is dependent on the game. For some reason the MP menu in MWR has an unlocked framerate, and sends the console into spasm. Its silly because its literally a menu but you see your character with your gun equipped etc not doing very much. I dusted mine regularly and didnt play it that much. So i really hope ps5 is quieter and i hope the large design will make that happen.

 

[geordiemp]

Hype about hypothetical termal paste, hmm that's new. Honestly I don't see it being used unless Sony came with some new formula.

They have found a way of sealing and manufacture which may lend itseft to a different alloy / Eutectic.

This is unlikely a coincidence we have 2 cooling patents, one allows cooling both sides of APU with dual heat sinks (in small print of the stacked die one), and one allows sealing and consistent heat transfer to the upper heat sink.

What is in the ps5, we donty know.

Sounds logical to me, Sony must have something special for 2.23 Ghz and Cerny said we will be impressed, so its not something simple,a nd I would not be surprised to see both solutions for this frequency..

 

[M1chl]

They have found a way of sealing and manufacture which may lend itseft to a different alloy / Eutectic.

This is unlikely a coincidence we have 2 cooling patents, one allows cooling both sides of APU with dual heat sinks (in small print of the stacked die one), and one allows sealing and consistent heta transfer to the upper heat sink.

Sounds logical to me, Sony must have something special for 2.23 Ghz and Cerny said we will be impressed, so its not something simple.

It's going to be interesting to see, what is coming : )

 

[Bo_Hazem]

Pretty much this. One of the reasons why i loved the og xbox one. It was super silent. I mean half the console was a fan lol

Bigger fan is usually good, but it's not the only solution, with smart tunneling, you can drive air fast enough without using high rpm. Plus PS4 Pro was using a worse solution in comparison to the vapor chamber in XOX, that's another game changer.

I think a lot of it is dependent on the game. For some reason the MP menu in MWR has an unlocked framerate, and sends the console into spasm. Its silly because its literally a menu but you see your character with your gun equipped etc not doing very much. I dusted mine regularly and didnt play it that much. So i really hope ps5 is quieter and i hope the large design will make that happen.

I played more than 180-190 games this gen, and I spend sometimes more than 24-48 hours non-stop (non sleeping of course) when I just can't drop the controller. All the suggested games that have such issues (such as HZD, GOW) have been a breeze. If I close the AC and the room temperature is kinda hot like 28C when it's hot outside then I can hear the fan, not noisy but I hear it. The base model was dead all the time, no sound at all.

Maybe some people don't have AC and those consoles suffer? Or probably not putting the PS4 in a well-opened space? Or maybe too much heaters during winter making the same effect? It's a mystery for me, and I think to some they might find it hard to believe the video I uploaded of mine recently with GOT.

Well, if someone interested, I'll load GOW and show how it is just to confirm it. I found my PS4 Pro very dirty, I should give it some cleaning for the vents at least.

 

[LordOfChaos]

Damn son, liquid metal in a mass consumer console?

It's not particularly that it's expensive, but that it'll run right through porous metals, so sealing it properly is vital, another part of the patent

 

[loktaiextatus]

Liquid metal makes no sense unless they've come up with a new formula.

It needs to be replaced every couple of years normally.

I am looking at this thread and laughing my ass off because people seem to think liquid metal refers to the specific existing product of that name. They area not referring to liquid metal tm. They are referring to something else. Not using an of the shelf product. Do people seriously look at toys and take away from it "sony has a registered patent for applying an off the shelf thermal paste"?

No.... It's not quite that.

 

[Bo_Hazem]

The more that's revealed about the PlayStation 5, the more plausible the argument that it may cost more than $500 or more than the Xbox Series X becomes.

Smart design doesn't always mean expensive design, vice versa.

 

[Maxwell Jacob Friedman]

Now THAT is cool

 

[Gamerguy84]

I had zero doubts the PS5 was going to be quiet considering the complaints. That and the DS life.

 

[MasterCornholio]

Reading is hard, today is 14th august, yesterday was when exactly ?

Oops

 

[oldergamer]

Publication date 13.08.2020 - must be the influx of bad news, getting desperate....to troll another Sony thread.

Riiiight. you do know sony makes more then playstations, right?

 

[MasterCornholio]

Riiiight. you do know sony makes more then playstations, right?

Like for what devices though?

A semiconductor chip that constitutes a semiconductor device that functions as a Central Processing Unit (CPU), a Graphics Processing Unit (GPU), or the like is thermally connected to a radiator such as a heat sink or a heat pipe and is cooled. There are many electronic devices in which grease is used as a heat conductive material provided between a semiconductor chip and a radiator.

Sony patented cooling solution - likely for ps5

So this is the variable clock secret sauce

www.neogaf.com

Now, can you name another thing on Sony that uses an APU?

NOTE: He might not read this, as he said he'll put me in ignore.

What do you think of what this person said?

Original poster: Sorry about the edit I just wanted it to seem softer if you know what I mean.

 

[Bo_Hazem]

Riiiight. you do know sony makes more then playstations, right?

A semiconductor chip that constitutes a semiconductor device that functions as a Central Processing Unit (CPU), a Graphics Processing Unit (GPU), or the like is thermally connected to a radiator such as a heat sink or a heat pipe and is cooled. There are many electronic devices in which grease is used as a heat conductive material provided between a semiconductor chip and a radiator.

Sony patented cooling solution - likely for ps5

So this is the variable clock secret sauce

www.neogaf.com

Now, can you name another thing in Sony that uses an APU? You can always say "I think I'm wrong, sorry", but you're too stubborn and wanna make drama out of nothing.

NOTE: He might not read this, as he said he'll put me in ignore. Too much sense to him.

 

[ManaByte]

And this is why the PS5 will be $599.

 

[longdi]

And this is why the PS5 will be $599.

And this is also why PS5 is not smart enough engineering....or at least over ran its budget target....

 

[Craig of War]

And this is why the PS5 will be $599.

If it is 599 or even 699 than might as well build a PC.